IRFL4105 mosfet equivalent, power mosfet.
rm Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEX.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its uniqu.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .
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